| PART |
Description |
Maker |
| HUF75321D3ST |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
Fairchild Semiconductor
|
| HUF75321D3 HUF75321D3S 75321D |
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM
3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc]
Motorola, Inc.
ON SEMICONDUCTOR
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| IRF5EA1310 IRF5EA1310PBF |
23 A, 100 V, 0.036 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
100V Single N-Channel Hi-Rel MOSFET in a 28-pin LCC package
|
International Rectifier
|
| 0475960133 |
0.9144mm (.036) by 0.9144mm (.036) Pitch LGA 1156 Desktop PC CPU Socket,0.76μm (30μ) Gold (Au) Plating, with Pick-and-Place Cover, 1156Circuits, Leadfree
|
Molex Electronics Ltd.
|
| MTW33N10E ON2695 |
TMOS POWER FET 33 AMPERES 100 VOLTS RDS(on) = 0.06 OHM 33 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| MTP1N100E_D ON2558 MTP1N100E MTP1N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement - Mode Silicon Gate
From old datasheet system
TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM
|
ON Semiconductor
Motorola, Inc
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| MTD5N25E MTD5N25E_D ON2508 MTD5N25E-D |
TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 5.0 AMPERES 250 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
|
